The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires

The spds-spin-orbit-coupled tight-binding model and linearized Boltzmann transport theory is applied to calculate the electrical conductivity, the Seebeck coefficient, and the power factor of silicon nanowires (NWs) with diameters D<12nm. Using experimentally measured values for the lattice thermal conductivity we estimate the room temperature thermoelectric figure of merit to be ZT~1. Keywords...

Seebeck coefficient in silicon nanowire arrays

On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

Optical pulse compression based on nonlinear silicon waveguides and chirped Bragg gratings

Due to the growing demand for higher bandwidth, employing optical devices instead of electronic devices in data transmission systems has attracted much attention in recent years. Optical switches, modulators and wavelength converters are a few examples of the required optical devices. CMOS compatible fabrication of these devices, leads to much more growing of this technology. Optical pulse comp...